* * MOSIS WAFER ACCEPTANCE TESTS * * RUN: T92Y (MM_NON-EPI_THK-MTL) VENDOR: TSMC * TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns * Run type: DED * * *INTRODUCTION: This report contains the lot average results obtained by MOSIS * from measurements of MOSIS test structures on each wafer of * this fabrication lot. SPICE parameters obtained from similar * measurements on a selected wafer are also attached. * *COMMENTS: DSCN6M018_TSMC * * *TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS * * MINIMUM 0.27/0.18 * Vth 0.50 -0.49 volts * * SHORT 20.0/0.18 * Idss 572 -276 uA/um * Vth 0.52 -0.49 volts * Vpt 4.7 -5.2 volts * * WIDE 20.0/0.18 * Ids0 20.8 -15.2 pA/um * * LARGE 50/50 * Vth 0.42 -0.41 volts * Vjbkd 3.7 -4.4 volts * Ijlk <50.0 <50.0 pA * * K' (Uo*Cox/2) 171.0 -37.0 uA/V^2 * Low-field Mobility 406.07 87.86 cm^2/V*s * *COMMENTS: Poly bias varies with design technology. To account for mask * bias use the appropriate value for the parameters XL and XW * in your SPICE model card. * Design Technology XL (um) XW (um) * ----------------- ------- ------ * SCN6M_DEEP (lambda=0.09) 0.00 -0.01 * thick oxide 0.00 -0.01 * SCN6M_SUBM (lambda=0.10) -0.02 0.00 * thick oxide -0.02 0.00 * * *FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS * Vth Poly >6.6 <-6.6 volts * * *PROCESS PARAMETERS N+ P+ POLY N+BLK PLY+BLK M1 M2 UNITS * Sheet Resistance 7.0 8.1 8.3 59.5 306.6 0.08 0.08 ohms/sq * Contact Resistance 8.3 8.8 8.1 4.83 ohms * Gate Oxide Thickness 41 angstrom * *PROCESS PARAMETERS M3 POLY_HRI M4 M5 M6 N_W UNITS * Sheet Resistance 0.08 0.08 0.07 0.01 951 ohms/sq * Contact Resistance 9.74 15.36 21.50 23.45 ohms * *COMMENTS: BLK is silicide block. * * *CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 R_W D_N_W M5P N_W UNITS * Area (substrate) 969 1234 101 34 14 9 7 5 4 129 130 aF/um^2 * Area (N+active) 8517 53 20 14 11 9 8 aF/um^2 * Area (P+active) 8275 aF/um^2 * Area (poly) 64 17 10 7 5 4 aF/um^2 * Area (metal1) 35 14 9 6 5 aF/um^2 * Area (metal2) 36 14 9 6 aF/um^2 * Area (metal3) 37 14 9 aF/um^2 * Area (metal4) 36 14 aF/um^2 * Area (metal5) 35 1039 aF/um^2 * Area (r well) 953 aF/um^2 * Area (d well) 562 aF/um^2 * Area (no well) 140 aF/um^2 * Fringe (substrate) 196 229 53 36 29 24 21 19 aF/um * Fringe (poly) 68 38 29 23 19 18 aF/um * Fringe (metal1) 49 34 22 20 aF/um * Fringe (metal2) 45 35 27 23 aF/um * Fringe (metal3) 54 34 30 aF/um * Fringe (metal4) 63 43 aF/um * Fringe (metal5) 66 aF/um * *CIRCUIT PARAMETERS UNITS * Inverters K * Vinv 1.0 0.74 volts * Vinv 1.5 0.79 volts * Vol (100 uA) 2.0 0.08 volts * Voh (100 uA) 2.0 1.62 volts * Vinv 2.0 0.83 volts * Gain 2.0 -24.67 * Ring Oscillator Freq. + D1024_THK (31-stg,3.3V) 302.91 MHz * DIV1024 (31-stg,1.8V) 377.13 MHz * Ring Oscillator Power * D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate * DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate * * COMMENTS: DEEP_SUBMICRON * T92Y SPICE BSIM3 VERSION 3.1 PARAMETERS * SPICE 3f5 Level 8, Star-HSPICE Level 49, UTMOST Level 8 * DATE: May 21/09 * LOT: T92Y WAF: 9103 * Temperature_parameters=Default .MODEL N NMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4.1E-9 +XJ = 1E-7 NCH = 2.3549E17 VTH0 = 0.3694303 +K1 = 0.5789116 K2 = 1.110723E-3 K3 = 1E-3 +K3B = 0.0297124 W0 = 1E-7 NLX = 2.037748E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 1.2953626 DVT1 = 0.3421545 DVT2 = 0.0395588 +U0 = 293.1687573 UA = -1.21942E-9 UB = 2.325738E-18 +UC = 7.061289E-11 VSAT = 1.676164E5 A0 = 2 +AGS = 0.4764546 B0 = 1.617101E-7 B1 = 5E-6 +KETA = -0.0138552 A1 = 1.09168E-3 A2 = 0.3303025 +RDSW = 105.6133217 PRWG = 0.5 PRWB = -0.2 +WR = 1 WINT = 2.885735E-9 LINT = 1.715622E-8 +XL = 0 XW = -1E-8 DWG = 2.754317E-9 +DWB = -3.690793E-9 VOFF = -0.0948017 NFACTOR = 2.1860065 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 2.665034E-3 ETAB = 6.028975E-5 +DSUB = 0.0442223 PCLM = 1.746064 PDIBLC1 = 0.3258185 +PDIBLC2 = 2.701992E-3 PDIBLCB = -0.1 DROUT = 0.9787232 +PSCBE1 = 4.494778E10 PSCBE2 = 3.672074E-8 PVAG = 0.0122755 +DELTA = 0.01 RSH = 7 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 8.58E-10 CGSO = 8.58E-10 CGBO = 1E-12 +CJ = 9.471097E-4 PB = 0.8 MJ = 0.3726161 +CJSW = 1.905901E-10 PBSW = 0.8 MJSW = 0.1369758 +CJSWG = 3.3E-10 PBSWG = 0.8 MJSWG = 0.1369758 +CF = 0 PVTH0 = -5.105777E-3 PRDSW = -1.1011726 +PK2 = 2.247806E-3 WKETA = -5.071892E-3 LKETA = 5.324922E-4 +PU0 = -4.0206081 PUA = -4.48232E-11 PUB = 5.018589E-24 +PVSAT = 2E3 PETA0 = 1E-4 PKETA = -2.090695E-3 ) * .MODEL P PMOS ( LEVEL = 49 +VERSION = 3.1 TNOM = 27 TOX = 4.1E-9 +XJ = 1E-7 NCH = 4.1589E17 VTH0 = -0.3823437 +K1 = 0.5722049 K2 = 0.0219717 K3 = 0.1576753 +K3B = 4.2763642 W0 = 1E-6 NLX = 1.104212E-7 +DVT0W = 0 DVT1W = 0 DVT2W = 0 +DVT0 = 0.6234839 DVT1 = 0.2479255 DVT2 = 0.1 +U0 = 109.4682454 UA = 1.31646E-9 UB = 1E-21 +UC = -1E-10 VSAT = 1.054892E5 A0 = 1.5796859 +AGS = 0.3115024 B0 = 4.729297E-7 B1 = 1.446715E-6 +KETA = 0.0298609 A1 = 0.3886886 A2 = 0.4010376 +RDSW = 199.1594405 PRWG = 0.5 PRWB = -0.4947034 +WR = 1 WINT = 0 LINT = 2.93948E-8 +XL = 0 XW = -1E-8 DWG = -1.998034E-8 +DWB = -2.481453E-9 VOFF = -0.0935653 NFACTOR = 2 +CIT = 0 CDSC = 2.4E-4 CDSCD = 0 +CDSCB = 0 ETA0 = 3.515392E-4 ETAB = -4.804338E-4 +DSUB = 1.215087E-5 PCLM = 0.96422 PDIBLC1 = 3.026627E-3 +PDIBLC2 = -1E-5 PDIBLCB = -1E-3 DROUT = 1.117016E-4 +PSCBE1 = 7.999986E10 PSCBE2 = 8.271897E-10 PVAG = 0.0190118 +DELTA = 0.01 RSH = 8.1 MOBMOD = 1 +PRT = 0 UTE = -1.5 KT1 = -0.11 +KT1L = 0 KT2 = 0.022 UA1 = 4.31E-9 +UB1 = -7.61E-18 UC1 = -5.6E-11 AT = 3.3E4 +WL = 0 WLN = 1 WW = 0 +WWN = 1 WWL = 0 LL = 0 +LLN = 1 LW = 0 LWN = 1 +LWL = 0 CAPMOD = 2 XPART = 0.5 +CGDO = 7.82E-10 CGSO = 7.82E-10 CGBO = 1E-12 +CJ = 1.214428E-3 PB = 0.8461606 MJ = 0.4192076 +CJSW = 2.165642E-10 PBSW = 0.8 MJSW = 0.3202874 +CJSWG = 4.22E-10 PBSWG = 0.8 MJSWG = 0.3202874 +CF = 0 PVTH0 = 5.167913E-4 PRDSW = 9.5068821 +PK2 = 1.095907E-3 WKETA = 0.0133232 LKETA = -3.648003E-3 +PU0 = -1.0674346 PUA = -4.30826E-11 PUB = 1E-21 +PVSAT = 50 PETA0 = 1E-4 PKETA = -1.822724E-3 ) *