* Model Library for the SPICE Examples * Microelectronic Circuits * Sedra & Smith * 5th Edition * * CD Release 2 (January 2004) * * Update to CD Release 1: Corrected the values of the model parameters * for parts NMOS0P5 and PMOS0P5 to match * those given in Table 4.8 (p.335) and used * in the SPICE Examples of the textbook. * * *$ * Model for uA741 Op Amp (from EVAL library in PSpice) * connections: non-inverting input * | inverting input * | | positive power supply * | | | negative power supply * | | | | output * | | | | | * .subckt uA741 1 2 3 4 5 * c1 11 12 8.661E-12 c2 6 7 30.00E-12 dc 5 53 dy de 54 5 dy dlp 90 91 dx dln 92 90 dx dp 4 3 dx egnd 99 0 poly(2),(3,0),(4,0) 0 .5 .5 fb 7 99 poly(5) vb vc ve vlp vln 0 10.61E6 -1E3 1E3 10E6 -10E6 ga 6 0 11 12 188.5E-6 gcm 0 6 10 99 5.961E-9 iee 10 4 dc 15.16E-6 hlim 90 0 vlim 1K q1 11 2 13 qx q2 12 1 14 qx r2 6 9 100.0E3 rc1 3 11 5.305E3 rc2 3 12 5.305E3 re1 13 10 1.836E3 re2 14 10 1.836E3 ree 10 99 13.19E6 ro1 8 5 50 ro2 7 99 100 rp 3 4 18.16E3 vb 9 0 dc 0 vc 3 53 dc 1 ve 54 4 dc 1 vlim 7 8 dc 0 vlp 91 0 dc 40 vln 0 92 dc 40 .model dx D(Is=800.0E-18 Rs=1) .model dy D(Is=800.00E-18 Rs=1m Cjo=10p) .model qx NPN(Is=800.0E-18 Bf=93.75) .ends *$ * Model for 1N4148 Diode (from EVAL library in PSpice) .model D1N4148 D(Is=2.682n N=1.836 Rs=.5664 Ikf=44.17m Xti=3 Eg=1.11 Cjo=4p + M=.3333 Vj=.5 Fc=.5 Isr=1.565n Nr=2 Bv=100 Ibv=100u Tt=11.54n) *$ * Model for ECL BJT (used in Chapter 11) .model QECL NPN(Is=0.26fA Bf=100 Br=1 Tf=0.1ns Cje=1pF Cjc=1.5pF Va=100) *$ * Model for MJE253 Power PNP BJT (from ON Semiconductor) .model QMJE253 PNP(IS=2.52937e-13 BF=54.36 NF=1.01478 VAF=4.91894 + IKF=0.84154 ISE=6.32316e-13 NE=3.6001 BR=3.71504 + NR=1.15303 VAR=49.1894 IKR=4.42705 ISC=6.32316e-13 + NC=2.93783 RB=417.673 IRB=7.10249e-06 RBM=0.000992345 + RE=6.68257e-05 RC=0.262081 XTB=1.32735 XTI=0.01 + EG=1.05 CJE=1.57797e-10 VJE=0.99 MJE=0.339209 + TF=2.58603e-09 XTF=1.5 VTF=0.999999 ITF=1 + CJC=6.54856e-11 VJC=0.0328604 MJC=0.208693 XCJC=0.8 + FC=0.532891 CJS=0 VJS=0.75 MJS=0.5 + TR=7.83777e-07 PTF=0 KF=0 AF=1) *$ * Model for MJE243 Power NPN BJT (from ON Semiconductor) .model QMJE243 NPN(IS=1.27357e-12 BF=188.792 NF=1.05658 VAF=13.5417 + IKF=0.442678 ISE=1e-16 NE=4 BR=1.73115 + NR=1.04113 VAR=135.417 IKR=1.00889 ISC=1e-16 + NC=2.93725 RB=193.999 IRB=5.29235e-05 RBM=0.000841015 + RE=9.44257e-05 RC=0.216999 XTB=1.16682 XTI=0.80411 + EG=1.05 CJE=2.19516e-10 VJE=0.99 MJE=0.39332 + TF=1.51916e-09 XTF=1.21445 VTF=11.3491 ITF=0.0098534 + CJC=7.43909e-11 VJC=0.4 MJC=0.287382 XCJC=0.799998 + FC=0.577401 CJS=0 VJS=0.75 MJS=0.5 + TR=7.76174e-07 PTF=0 KF=0 AF=1) *$ * Model for 2N3906 PNP BJT (from Eval library in Pspice) .model Q2N3906 PNP(Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 + Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p + Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n + Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) *$ * Model for 2N3904 NPN BJT (from Eval library in Pspice) .model Q2N3904 NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 + Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 + Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 + Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) *$ * Level-1 Model for the 5-um PMOS Transistor (Part PMOS5P0) * (created by Anas Hamoui & Olivier Trescases) .model PMOS5P0 PMOS(Level=1 VTO=-1 GAMMA=0.65 PHI=0.65 + LD=0.6E-06 WD=0 UO=250 LAMBDA=0.03 TOX=85E-9 PB=0.7 CJ=0.18E-3 + CJSW=0.6E-9 MJ=0.5 MJSW=0.5 CGDO=0.4E-9 JS=1E-6 CGBO=0.2E-9 + CGSO=0.4E-9) *$ * Level-1 Model for the 5-um NMOS Transistor (Part NMOS5P0) * (created by Anas Hamoui & Olivier Trescases) .model NMOS5P0 NMOS(Level=1 VTO=1 GAMMA=1.4 PHI=0.7 + LD=0.7E-06 WD=0 UO=750 LAMBDA=0.01 TOX=85E-9 PB=0.7 CJ=0.4E-3 + CJSW=0.8E-9 MJ=0.5 MJSW=0.5 CGDO=0.4E-9 JS=1E-6 CGBO=0.2E-9 + CGSO=0.4E-9) *$ * Level-1 Model for the 0.5-um PMOS Transistor (Part PMOS0P5) * (created by Anas Hamoui & Olivier Trescases) .model PMOS0P5 PMOS(Level=1 VTO=-0.8 GAMMA=0.45 PHI=0.75 + LD=0.09E-06 WD=0 UO=115 LAMBDA=0.2 TOX=9.5E-9 PB=0.9 CJ=0.93E-3 + CJSW=170E-12 MJ=0.5 MJSW=0.35 CGDO=0.35E-9 JS=5E-9 CGBO=0.38E-9 + CGSO=0.35E-9) *$ * Level-1 Model for the 0.5-um NMOS Transistor (Part NMOS0P5) * (created by Anas Hamoui & Olivier Trescases) .model NMOS0P5 NMOS(Level=1 VTO=0.7 GAMMA=0.5 PHI=0.8 + LD=0.08E-06 WD=0 UO=460 LAMBDA=0.1 TOX=9.5E-9 PB=0.9 CJ=0.57E-3 + CJSW=120E-12 MJ=0.5 MJSW=0.4 CGDO=0.4E-9 JS=10E-9 CGBO=0.38E-9 + CGSO=0.4E-9) *$ * Model for Nonlinear Transformer with Center-Tapped Secondary * (used in Chapter 3) .subckt TX 1 2 3 4 5 Params: Lp 2 1 10mH Ls1 3 4 52uH Ls2 4 5 52uH K1 Lp Ls1 0.999 K2 Lp Ls2 0.999 K3 Ls1 Ls2 0.999 .ends TX *$ * Model for Zener Diode (used in Chapter 3) .SUBCKT zener_diode 1 2 *connections: | | * andode | * cathode Dforward 1 2 mA_diode Dreverse 2 4 ideal_diode Vz0 4 3 DC 4.9V Rz 1 3 10 * diode model statements .model mA_diode D (Is=100pA n=1.679) .model ideal_diode D (Is=100pA n=0.01) .ends zener_diode *$