JELIB ASCII text
# header information:
HInvTest|8.11
# Views:
Vlayout|lay
# Technologies:
Tbicmos|ScaleFORbicmos()D25.0
Tmocmos|MoCMOSAlternateActivePolyRules()BT|ScaleFORmocmos()D25.0|mocmosNumberOfMetalLayers()I3|mocmosSecondPolysilicon()BF
# Cell AllTest;1{lay}
CAllTest;1{lay}||mocmos|1163648192318|1474546645465||DRC_last_good_drc_area_date()G1474546725391|DRC_last_good_drc_bit()I18|DRC_last_good_drc_date()G1474546725391
Ngeneric:Facet-Center|art@0||0|0||||AV
NMetal-1-N-Active-Con|contact@0||2|27.5||3||
NMetal-1-P-Active-Con|contact@1||2|53||6||
NMetal-1-N-Active-Con|contact@3||10|27.5||3||
NMetal-1-P-Active-Con|contact@4||10|53||6||
NMetal-1-Polysilicon-1-Con|contact@5||3|40||||
NMetal-1-Metal-2-Con|contact@6||2|40||||
NMetal-1-Metal-2-Con|contact@7||10|40||||
NMetal-1-N-Active-Con|contact@10||10|17.5||||
NMetal-1-N-Active-Con|contact@11||10|9.5||||
NMetal-1-P-Active-Con|contact@13||16.5|78|12|||
NMetal-1-P-Active-Con|contact@14||16.5|69|12|||
NN-Transistor|nmos@0||6|27.5|4||R|
NN-Transistor|nmos@1||10|13.5|1|||
NMetal-1-Pin|pin@0||2|0||||
NMetal-1-Pin|pin@3||2|90||||
NMetal-1-Pin|pin@25||10|40||||
NPolysilicon-1-Pin|pin@26||6|40||||
NMetal-1-Pin|pin@28||15|90||||
NMetal-1-Pin|pin@30||2|9.5||||
NP-Active-Pin|pin@31||13|69.75||||
NPolysilicon-1-Pin|pin@32||6|73.5||||
NMetal-1-Pin|pin@33||2|78||||
NP-Well-Node|plnode@0||6|17|24|46||A
NN-Well-Node|plnode@1||6|68|24|56||A
NP-Transistor|pmos@0||6|53|7||R|
NP-Transistor|pmos@2||16.5|73.5|13|||
NMetal-1-N-Well-Con|substr@0||2|90||||
NMetal-1-N-Well-Con|substr@1||10|90||||
NMetal-1-P-Well-Con|well@0||2|0||||
NMetal-1-P-Well-Con|well@1||10|0||||
AMetal-1|net@3||5|S1800|well@0||2|0|well@1||10|0
AMetal-1|net@6||1|S0|substr@0||2|90|pin@3||2|90
AN-Active|net@9|||S1800|contact@0||2|29.5|nmos@0|diff-top|2.25|29.5
AN-Active|net@10|||S0|contact@3||10|29.5|nmos@0|diff-bottom|9.75|29.5
AP-Active|net@14|||S1800|contact@1||2|50.5|pmos@0|diff-top|2.25|50.5
AP-Active|net@15|||S0|contact@4||10|50.5|pmos@0|diff-bottom|9.75|50.5
AMetal-1|net@47||1|S900|contact@6||3|40|contact@5||3|40
AMetal-1|net@49||1|S900|contact@4||10|56.5|pin@25||10|40
AMetal-1|net@50||1|S900|pin@25||10|40|contact@3||10|25.5
AMetal-1|net@51|||S0|contact@7||10|40|pin@25||10|40
AN-Active|net@52|||S900|contact@3||10|29.5|contact@3||10|27.5
APolysilicon-1|net@56|||S900|pmos@0|poly-left|6|46|pin@26||6|40|ATTR_R(D5G1;N)D96.10000000000001
APolysilicon-1|net@57|||S900|pin@26||6|40|nmos@0|poly-right|6|33|ATTR_R(D5G1;N)D74.39999999999999
APolysilicon-1|net@58|||S1800|contact@5||3|40|pin@26||6|40|ATTR_R(D5G1;N)D9.299999999999999
AMetal-1|net@59||5|S0|well@1||10|0|pin@0||2|0
AMetal-1|net@60||5|S0|substr@1||10|90|pin@3||2|90
AMetal-1|net@68||5|S1800|substr@1||10|90|pin@28||15|90
AN-Active|net@71|||S2700|contact@11||10|9|nmos@1|diff-bottom|10|9.75
AN-Active|net@72|||S2700|contact@10||10|17|nmos@1|diff-top|10|17.25
AN-Active|net@73||1|S900|contact@3||10|29.5|contact@10||10|17.5
AMetal-1|net@74||1|S2700|well@0||2|0|pin@30||2|9.5
AMetal-1|net@75||1|S2700|pin@30||2|9.5|contact@0||2|25.5
AMetal-1|net@76||1|S1800|pin@30||2|9.5|contact@11||10|9.5
APolysilicon-1|net@77|||S900|nmos@0|poly-left|6|22|nmos@1|poly-left|6|13.5
AP-Active|net@78|||S900|contact@13||23|78.5|pmos@2|diff-top|23|77.25
AP-Active|net@79||1|S2700|contact@14||13|69.5|pin@31||13|69.75
AP-Active|net@80|||S0|pmos@2|diff-bottom|23|69.75|pin@31||13|69.75
APolysilicon-1|net@82|||S0|pmos@2|poly-left|6.5|73.5|pin@32||6|73.5
APolysilicon-1|net@83|||S2700|pmos@0|poly-right|6|60|pin@32||6|73.5
AMetal-1|net@84||1|S2700|contact@1||2|56.5|pin@33||2|78
AMetal-1|net@85||1|S2700|pin@33||2|78|pin@3||2|90
AMetal-1|net@86||1|S0|contact@13||13.5|78|pin@33||2|78
AMetal-1|net@88||1|S2700|contact@4||10|53|contact@14||10|69
EI||D5G2;|contact@6||I
EO||D5G2;|contact@7||O/A
Egnd||D5G2;|pin@0||G
X
# Cell INV;1{lay}
CINV;1{lay}||mocmos|1163648192318|1366784044281||DRC_last_good_drc_area_date()G1460897884972|DRC_last_good_drc_bit()I18|DRC_last_good_drc_date()G1460893780397
Ngeneric:Facet-Center|art@0||0|0||||AV
NMetal-1-N-Active-Con|contact@0||2|10.5||3||
NMetal-1-P-Active-Con|contact@1||2|78||6||
NMetal-1-N-Active-Con|contact@3||10|10.5||3||
NMetal-1-P-Active-Con|contact@4||10|78||6||
NMetal-1-Polysilicon-1-Con|contact@5||3|40||||
NMetal-1-Metal-2-Con|contact@6||2|40||||
NMetal-1-Metal-2-Con|contact@7||10|40||||
NN-Transistor|nmos@0||6|10.5|4||R|
NMetal-1-Pin|pin@0||2|0||||
NMetal-1-Pin|pin@1||2|90||||
NMetal-1-Pin|pin@3||2|90||||
NMetal-1-Pin|pin@25||10|40||||
NPolysilicon-1-Pin|pin@26||6|40||||
NP-Well-Node|plnode@0||6|17|24|46||A
NN-Well-Node|plnode@1||6|68|24|56||A
NP-Transistor|pmos@0||6|78|7||R|
NMetal-1-N-Well-Con|substr@0||2|90||||
NMetal-1-N-Well-Con|substr@1||10|90||||
NMetal-1-P-Well-Con|well@0||2|0||||
NMetal-1-P-Well-Con|well@1||10|0||||
AMetal-1|net@0||5|S0|pin@1||2|90|pin@3||2|90
AMetal-1|net@3||5|S1800|well@0||2|0|well@1||10|0
AMetal-1|net@6||1|S0|substr@0||2|90|pin@3||2|90
AN-Active|net@9|||S1800|contact@0||2|10.5|nmos@0|diff-top|2.25|10.5
AN-Active|net@10|||S0|contact@3||10|10.5|nmos@0|diff-bottom|9.75|10.5
AMetal-1|net@11||1|S2700|contact@1||2|81.5|pin@3||2|90
AMetal-1|net@12||1|S2700|well@0||2|0|contact@0||2|8.5
AP-Active|net@14|||S1800|contact@1||2|78|pmos@0|diff-top|2.25|78
AP-Active|net@15|||S0|contact@4||10|78|pmos@0|diff-bottom|9.75|78
AMetal-1|net@47||1|S900|contact@6||3|40|contact@5||3|40
AMetal-1|net@49||1|S900|contact@4||10|74.5|pin@25||10|40
AMetal-1|net@50||1|S900|pin@25||10|40|contact@3||10|12.5
AMetal-1|net@51|||S0|contact@7||10|40|pin@25||10|40
AN-Active|net@52|||S900|contact@3||10|12.5|contact@3||10|10.5
APolysilicon-1|net@56|||S900|pmos@0|poly-left|6|71|pin@26||6|40|ATTR_R(D5G1;N)D96.10000000000001
APolysilicon-1|net@57|||S900|pin@26||6|40|nmos@0|poly-right|6|16|ATTR_R(D5G1;N)D74.39999999999999
APolysilicon-1|net@58|||S1800|contact@5||3|40|pin@26||6|40|ATTR_R(D5G1;N)D9.299999999999999
AMetal-1|net@59||5|S0|well@1||10|0|pin@0||2|0
AMetal-1|net@60||5|S0|substr@1||10|90|pin@3||2|90
EI||D5G2;|contact@6||I
EO||D5G2;|contact@7||O/A
Egnd||D5G2;|pin@0||G
Evdd||D5G2;|pin@1||P
X
Redraw
Inline image (not used any more)
