Hochschule Kempten      
Fakultät Elektrotechnik      
Microelectronics       Fachgebiet Elektronik, Prof. Vollrath      

Microelectronics

05 IC Manufacturing

Prof. Dr. Jörg Vollrath


04 Inverter


Video of lecture 05 19.04.2021


Länge: 40:00
0:0:50 From silicon to chip

0:1:37 Status Semiconductor Manufacturing

0:7:40 Wafers and Lots

0:11:57 Wafer Map 64 MBit DRAM

0:14:10 Perfect chips, DC good, functional, repairable

0:15:23 Chip Area, chips per wafer

0:21:10 Cost per chip, Yield, absolut, relative

0:24:40 Contact fails

0:26:40 Defect density on wafer

0:28:20 Defect density, chip size, yield, cost

0:34:55 A Memory Chip 1997

0:37:20 Cross Section of Microprocessor Chip

Video of lecture 05 21.04.2021


Länge: 40:00
0:0:0 Delay Times

0:2:55 Preferences SPICE parasitics

0:5:55 RC Delay

0:7:30 Video process

0:12:33 Wafer carcass

0:16:0 Test cost and duration

0:19:30 450mm wafers not yet

0:21:0 Pattern transfer with photo mask

0:23:19 CMP, cleaning, thermal anneal

0:25:14 CMOS Manufacturing process animation

0:26:40 Alignment marks

0:28:40 n-well

0:29:40 Polysilicon

0:31:40 Metal

Overview

Review:

Today:

Reading:

Embedded World 2024 and Hochschulmesse


Status semiconductor manufacturing 2017


Design und Elektronik 3/2017 Semiconductor Manufacturing:

Leading players: Intel, Samsung, TSMC

Topic28 nm14 nm
Design cost30 Mio. $80 Mio. $
Metal layers 11
Wafer cost3500.-$ 4800.-$ per wafer
Duration2.5 months, 68 days for 52 photo masks
1 week package and test
66 photo masks, 3 months

Book about microprocessor design: The Pentium Chronicles

Challenges of Semiconductor Manufacturing

Wafers and lots

  • Silicon wafer
    300mm diameter
  • Rectangular chips
  • Defects
  • 25 Wafers are one lot
  • Processed wafer cost ~ 1000..2000 $
  • Mask set: 10k..1M $
  • For a given defect density an optimum chip size can be calculated
Wafer 2 Zoll bis 8 Zoll 2

1 Lot: 25 Wafers
Wafer are specified by diameter. A 200mm wafer has a radius of 100mm.
300mm, 8" ≈ 200mm, 6", 4", 3".

https://en.wikipedia.org/wiki/Wafer_(electronics)

Wafer map 64 MBit memory chip (1997)

Number of Chips per Wafer:
38*20 – 2 *(1+1+2+4+5+7+10+16)
- 2 *(1+2+3+5+7+9+13) = 760 – 172 = 588

Die Area Estimation 200mm wafer diameter:
π * r *r /(number of chips)

31416 mm2 / 588 = 53.4 mm2

Technology 0.24 μm
8F2 Cell, 64 MBit
Array Size :
64 MBit * 8 * 0.24 * 0.24E-6 mm2 = 30.1 mm2

Cell Efficiency :
Memory cell area / Die size =
30.1/53.4 = 56.4 %

Year: 1996

Yields:


Absolute yield:
\( Y = \frac{N_{Good}}{N_{Total}} \)

Perfect yield: White chips
\( Y_{perfect} = \frac{7}{576} = 1.18 \% \)

Example: Defect density and chip size

4 black defects, 4 blue defects, 8 pink defects
Size A, 4 A, 16 A

Example: Defect density and chip size

300mm wafer, total cost: $1000.-
Chip area Defects,
Good chips, Yield, cost per good chip
Chips per wafer,
minimum cost per chip
4 8 16
A = 68 mm2 454, 99%, $2 450, 98%, $2 442, 96%, $2 458, $2
4 A = 274 mm2 98, 96%, $10 94, 92%, $1187, 88%, $12 102, $10
16 A = 1097 mm2 20, 84%, $50 16, 66%, $629, 33%, $111 24, $40

With larger area the cost per chip increases non linear.
Larger chip area leads to wafer area loss at the edge.

Chip size of 100 mm2 is optimum.

A memory chip 1997

Cross-section of microprocessor chip


Courtesy of International Business Machines Corporation. Unauthorized use not permitted.

Cross-section of 64-bit high-performance microprocessor chip

Date added: 05 Dec 2005

Cross-section of 64-bit high-performance microprocessor chip built in IBM's 90 nm Server-Class CMOS technology with Cu/low-k wiring.
Above the transistors, the wiring levels include one W local interconnect, five "1x-scaled" Cu levels in full SiCOH low-k dielectric, three "2x-scaled" Cu/SiCOH levels, two "6x-scaled" Cu levels in FTEOS/SiO2 dielectric, and finally, one Al(Cu) terminal pad and wiring level.
The minimum M1 Cu line widths and spaces are 0.12 um.

Process steps


Pattern transfer with photo mask


The wafer is coated with photo resist. The pattern of a mask is transfered via light into the photo resist. The illuminated photo resist changes properties and is selectively removed.
Photolithography

Deposition


Oxide, nitride or metal can be deposited uniformly onto the wafer.

Etch


There is chemical or plasma etch possible to remove material selectively.

Implant


Dopant ions (phosphor, boron) are electrically accelerated and shot into the wafer.
After annealing at high temperature the dopants are activated.

Process steps continued


CMP chemical mechanical polishing


"Chemical mechanical polishing/planarization is a process of smoothing surfaces with the combination of chemical and mechanical forces." Wikipedia

Chemical cleaning


Between manufacturing steps cleaning procedures are applied to increase yield.

Thermal anneal


High temperature steps are necessary to activate dopants.

All steps are monitored to be able to trace a bad product to the root cause.

CMOS Manufacturing process


Top view:

Cross section:

Learning outcome

Next:


05 Design Rules