Go from one voltage level to another between certain sampling times.
At the moment we assume an ideal sample and hold circuit.
Real sample and hold circuits are presented later.
A simple RC charging circuit is our model.
Performance parameters are:
Speed: Sampling rate, bandwidth, latency
Power
Number of bits
Complexity
DAC speed: voltage difference requirement
A capacitor has to be charged to the 1/2 LSB range of the input voltage:
\( | V_e - V_a | < 0.5 LSB \)
The voltage on the capacitor is:
\( V_a = V_e \cdot \left( 1 - e^{-\frac{t}{\tau}} \right) \) with \( \tau = RC \)
Maximum difference could be full scale \( V_e = 2^{B} \cdot LSB \) with
B number of bits:
\( 2^{B} \cdot LSB \cdot e^{-\frac{t}{\tau}} < 0.5 LSB \)
\( -\frac{t}{\tau} < \left( -B-1 \right) ln \left( 2 \right) \)
\( t > R C \left( B+1 \right) ln \left( 2 \right) \)
Measurement: Time when half level is reached: t1
Settling time: (B+1)*t1
A capacitor has to be charged to the 1/2 LSB range of the input voltage:
\( | V_e - V_a | < 0.5 LSB \)
The voltage on the capacitor is:
\( V_a = V_e \cdot \left( 1 - exp^{-\frac{t}{\tau}} \right) \) with \( \tau = RC \)
This gives:
\( V_e - V_e \cdot \left( 1 - exp^{-\frac{t}{\tau}} \right) < 0.5 LSB \)      
\( V_e \cdot e^{-\frac{t}{\tau}} < 0.5 LSB \)
Maximum difference could be full scale \( V_e = 2^{B} \cdot LSB \) with
B number of bits:
\( t > R C \left( B+1 \right) ln \left( 2 \right) \)
Measurement:
Time when half level is reached: t1
Settling time: (B+1)*t1
RC low pass thermal noise
A resistor has a noise voltage:
\( \frac{V_{rms}^2}{\Delta f} = 4 k_B \cdot T \cdot R \)
A low pass RC network limits the noise to:
\( \overline{v_n^2} = \frac{k_B T}{C} \)
This noise has to be lower than the quantization noise:
\( \overline{v_q^2} = \frac{\Delta^2}{12} = \frac{V_{FS}^2}{2^{2B} \cdot 12}\)
\( \frac{k_B T}{C} \lt \frac{V_{FS}^2}{2^{2B} \cdot 12}\)
\( \frac{C}{k_B T} \gt \frac{2^{2B} \cdot 12}{V_{FS}^2} \)
\( C \gt 12 \cdot k_B \cdot T \frac{2^{2 B}}{V_{FS}^{2}} \)
kB: Boltzmann constant
T: absolute temperature in Kelvin
B: number of Bits
VFS: Full scale voltage
B
Cmin(VFS=3.3V)
Cmin(VFS=1V)
8
0.3 fF
0.003 pF
12
80 fF
0.8 pF
16
20.6 pF
206 pF
20
5.28 nF
52.8 nF
24
1.32 uF
13.2 uF
Table: Required C as function of ADC resolution and full scale voltage
Adding 4 bits required an increase in capacitance by a factor of 256.
Decreasing the voltage by a factor of 3.3 increases the capacitance with a factor of 10.
3 Bit R string or ladder DAC
A R ladder divides VREF voltage into all possible voltage levels.
Inherent monotonic
At each resistance there is a LSB voltage difference.
D0b is the inverted signal of D0.
At certain code all "1" signals close the associated switches.
A voltage is transfered to Vout.
The shown circuit can be saved and simulated in LTSPICE giving a ramp test.
3 Bit R string or ladder DAC
Speed
Time constant:
Ideal voltage source at a series RC low pass.
R = (3 R || 5 R) = 15/8 R
Maximum resistance for half VDD, code 100...
Resistance range:
1 Ω .. 1 MΩ
20 bits.
Resistance for MOSFET switches and contacts.
Complexity
2B resistors and 2 * 2B switches are a high element count
τ = 0.25 · 2B R C
There are 2B of unit resistors.
The highest resistance is at midpoint.
Half resistance will be connected to VDD and half to ground.
For equivalent resistance these resistances are in parallel.
Practical example
M. Pelgrom, “A 10-b 50-MHz CMOS D/A Converter with 75-W Buffer,” JSSC, Dec. 1990, pp. 1347
1 V pp output into 75 Ω, 25 pF load
1.6 µm CMOS, 5 V; 65mW (50 MHz, 1Vpp);
1024 resistors 6..10 Ω
16 large resistors 250 Ω parallel to 32 75 Ω polysilison resistors with switches each;
Power: driver transistor 7.3 mA, driver circuit 4 mA; ladder current 1mA, digital 0.7 mA: total 13mA.
Rise fall time 6ns; 19 Mhz signal bandwidth; 50 MHz sample frequency; 2.5 mm2 die size
DNL; INL < 0.35; 5MHz Signal -53 dB to total harmonic distortion
Extra logic is needed to generate the control signals from the binary input code.
2 switches are always active on the left side for the 2 high order bits
providing an upper and lower voltage for interpolation.
The simulation shows the control signals for the upper bits, the intermediate voltages VA
and VB and the resulting output voltage Vout.
This configuration can not generate any DC content.
Therefore reset switches are needed after each cycle.
Alternatively a code of all 0 can be applied between data output.
This causes additional power consumption.
4 Bit binary split array charge DAC
The range of C can be limited using a coupling capacitor C4.
R2R DAC
Only R and 2R values are needed.
Calculation of output voltage with equivalent sources:
R is 1 kΩ.
All data inputs can be looked at as voltage sources
VD0...VD3.
The voltages internally for equivalent sources are V0L..V2L, VoutL.
\( V_{0L} = V_{D0} \frac{2 R}{4 R} = V_{D0} \frac{1}{2} \)
\( R_{i0} = 2 R || 2R = \frac{2 R 2 R}{2 R + 2 R} = R \)
\( V_{1L} = (V_{0L} - V_{D1}) \frac{2 R}{4 R} + V_{D1}
= V_{0L} \frac{1}{2} + V_{D1} \frac{1}{2}
= V_{D0} \frac{1}{4} + V_{D1} \frac{1}{2}\)
\( R_{i1} = 2 R || 2R = \frac{2 R 2 R}{2 R + 2 R} = R \)
\( V_{nL} = (V_{(n-1)L} - V_{Dn}) \frac{2 R}{4 R} + V_{Dn}
= V_{(n-1)L} \frac{1}{2} + V_{Dn} \frac{1}{2}
= \sum_{i=0}^{n} \frac{V_{Di}}{2^{n-i+1}} \)
Capacitors can be used instead of the resistance R giving a C2C DAC.
Practical considerations
Variations of components:
R, C, V
offset of operational amplifier
What is allowed to have less than 1/2 LSB INL and DNL?
C. Lin and K. Buit, " A 10-b, 500- MSample/s CMOS DAC in 0.6mm2", JSSC, vol. 33, pp.1948-1958,1998
Untrimmed segmented
T. Miki et al, “An 80-MHz 8-bit CMOS D/A Converter,” JSSC December 1986, pp. 983
A. Van den Bosch et al, “A 1-GSample/s Nyquist Current-Steering CMOS D/A Converter,” JSSC March 2001, pp. 315
Savoj, J, A 12-GS/s Phase-Calibrated CMOS Digital-to-Analog Converter for Backplane Communications , JSSC, 2008, pp. 1207 - 1216
Current copiers:
D. W. J. Groeneveld et al, “A Self-Calibration Technique for Monolithic High-Resolution D/A Converters,” JSSC December 1989, pp. 1517
Dynamic element matching:
R. J. van de Plassche, “Dynamic Element Matching for High-Accuracy Monolithic D/A Converters,” JSSC December 1976, pp. 795