Microelectronics02 HistoryProf. Dr. Jörg Vollrath01 Introduction |
Länge: 1:02:33 min |
0:0:54 Transistor, Layout, Cross Section 0:4:5 Transistor count 0:9:5 Moore's Law: Feature Size 0:13:0 Microelectronics over time 0:16:20 iFixit iPhone Analysis 0:18:5 iPhone Main Board 0:19:40 Blessing and Curse of Microelectronics 0:22:48 Design Entry 0:27:5 Software Tools 0:28:35 Integrated Circuit Challenges 0:29:55 Laboratory: Build a 4 bit positive number multiplier 0:32:43 Hierarchical description, one solution 0:36:40 Citations: Don't optimize too early. 0:39:19 Design flow 0:43:25 Technologies 0:47:15 Inverter schematic 0:49:45 Truth table 0:51:13 Source drain, schematic, color, layout box 0:54:5 Stick diagram 0:56:13 What do I do with 1 billion transistors? 0:57:32 Inverter schematic and layout 1:2:5 p-well and n-well 1:5:57 p-well and n-well contact 1:8:31 Layout well contact 1:12:45 F and lambda 1:13:29 N-MOSFET equations 1:16:16 β, width W, length L, capacitance Cox 1:22:4 0 |
Quelle: Wikimedia 1947 Bell 1 Bipolar transistor 30 μ m 50 MHz |
Courtesy of Intel 2008 Intel Core i7 731 Million MOS Transistors 45 nm process 263 mm2 2.6..3.2 GHz |
Source: iFixit CC BY-NC-SA 3.0 |
Samsung ARM processor S5PC100 600MHz 16 GB of Toshiba NAND flash memory NOR Pseudo SRAM Numonyx 256MB DDR SDRAM Analog Broadcom, Infineon Power Management Infineon, NXP |
Quelle Vollrath | Quelle Vollrath |
Technology | RN | RP | COX | Vthn | VDD | IDD | gmmax | gdmax | ft | Model |
1 μm | 15kΩL/W | 45kΩL/W | 1.75fF WL/F2 | 1V | 5V | 3 mA | cmosedu_models N_1um | |||
600 nm | ΩL/W | ΩL/W | fF WL/F2 | V | mA | C5_models | ||||
50 nm | 34kΩ/W | 68kΩ/W | 62.5aF WL/F2 | 0.3 V | 1 V | mA | cmosedu_models N_50nm |
Schematic Layout Graphical State machine VHDL SystemC C/C++ |
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